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DISCRETE SEMICONDUCTORS
DATA SHEET
BUX84F; BUX85F Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. APPLICATIONS * Converters * Inverters * Switching regulators * Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated from all pins
BUX84F; BUX85F
2 1
MBB008
3
123
MBK109
Fig.1
Simplified outline (SOT186) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUX84F BUX85F VCEO collector-emitter voltage BUX84F BUX85F VCEsat ICsat IC ICM Ptot tf collector-emitter saturation voltage collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time Th 25 C see Fig.4 open base - - - - - - - 0.4 400 450 1 1 2 3 18 - V V V A A A W s PARAMETER collector-emitter peak voltage VBE = 0 - - 800 1000 V V CONDITIONS TYP. MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 5 N force on centre of package. 2. Mounted with heatsink compound and 30 5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL VisolM Cisol PARAMETER isolation voltage from all terminals to external heatsink (peak value) - isolation capacitance from collector to external heatsink 2 12 TYP. - MAX. 1500 V pF UNIT PARAMETER thermal resistance from junction to external heatsink thermal resistance from junction to ambient CONDITIONS note 1 note 2 VALUE 7.2 4.7 55 UNIT K/W K/W K/W
1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUX84F BUX85F VCEO collector-emitter voltage BUX84F BUX85F IC ICM IB IBM Ptot Tstg Tj Note 1. Mounted without heatsink compound and 30 5 N force on centre of package. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS MIN. 400 450 - - - - - - 15 20 - collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature Th 25 C; note 1 open base - - - - - - - -65 - VBE = 0 - - CONDITIONS
BUX84F; BUX85F
MIN.
MAX. 800 1000 400 450 2 3 0.75 1 18 +150 150 V V V V A A A A W C C
UNIT
TYP. - - - - - - - - - 50 20
MAX. - - 0.8 1 1.1 0.2 1.5 1 - 100 -
UNIT V V V V V mA mA mA
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 2 and 3 BUX84 BUX85 collector-emitter saturation voltage IC = 0.3 A; IB = 30 mA; see Fig.4 IC = 1 A; IB = 200 mA; see Fig.4
VCEsat
VBEsat ICES
base-emitter saturation voltage collector-emitter cut-off current
IC = 1 A; IB = 200 mA; see Fig.5 VCE = VCESmax; VBE = 0 VCE = VCESmax; VBE = 0; Tj = 125 C
IEBO hFE
emitter-base cut-off current DC current gain
VEB = 5 V; IC = 0 VCE = 5 V; IC = 5 A; see Fig.6 VCE = 5 V; IC = 100 mA; see Fig.6
fT
transition frequency
VCE = 10 V; IC = 200 mA; f = 1 MHz
MHz
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
SYMBOL
PARAMETER
CONDITIONS - - - -
MIN.
TYP.
MAX.
UNIT s s s s
Switching times resistive load (see Fig.7) ton ts tf turn-on time storage time fall time ICon = 1 A; IBon = 200 mA; IBoff = -400 mA; VCC = 250 V ICon = 1 A; IBon = 200 mA; IBoff = -400 mA; VCC = 250 V ICon = 1 A; IBon = 200 mA; IBoff = -400 mA; VCC = 250 V ICon = 1 A; IBon = 200 mA; IBoff = -400 mA; VCC = 250 V; Tmb = 95 C 0.2 2 0.4 - 0.5 3.5 - 1.4
andbook, halfpage
+ 50 V 100 to 200 L
I halfpage handbook,C (mA) 250 200
MGE239
horizontal oscilloscope
100
vertical 300 1
MGE252
6V 30 to 60 Hz
0
VCE (V) min VCEOsust
Fig.2
Test circuit for collector-emitter sustaining voltage.
Fig.3
Oscilloscope display for collector-emitter sustaining voltage.
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
(1)
handbook, full pagewidth
(2)
(3)
(4)
MGB908
4
VCEsat (V) 3
2
1
0 0 0.05 0.1 0.15 0.2 0.25 IB (A) 0.3
(1) IC = 0.3 A.
(2) IC = 0.5 A.
(3) IC = 0.7 A.
(4) IC = 1 A.
Tj = 25 C; solid line: typical values; dotted line: maximum values.
Fig.4 Collector-emitter saturation voltage as a function of base current; typical values.
MGB904
handbook, halfpage
1.0
102 handbook, halfpage
MGB879
VBEsat (V)
(1) (2) (3)
hFE
typ
0.75
10
0.5
0
100
200
IB (mA)
300
1 10-2
10-1
1
IC (A)
10
Tj = 25 C. (1) IC = 1 A. (2) IC = 0.5 A. (3) IC = 0.3 A.
Fig.5
Base-emitter saturation voltage as a function of emitter current; typical values.
Fig.6 DC current gain; typical values.
1997 Aug 14
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
handbook, halfpage
tr 30 ns IB on
MBB731
90% IB 10%
t IB off IC on
90%
IC
10% ton tf ts t
Fig.7
Switching time waveforms with resistive load.
handbook, full pagewidth
+25 V BD139 T 100 VIM 100 BD140 30
MGE253
200
680 F
250 100 F D.U.T.
VCC 250V
tp
Vi
50
680 F
tp = 20 s; T = 2 ms; VIM = 15 V.
Fig.8 Test circuit resistive load.
1997 Aug 14
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
PACKAGE OUTLINE Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs
BUX84F; BUX85F
SOT186
E E1 P m A A1
q D1
D
L1 Q
L L2
b1
1
2
b e e1
3
wM c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.4 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.5 1.3 c 0.55 0.38 D 17.0 16.4 D1 7.9 7.5 E 10.2 9.6 E1 5.7 5.3 e 2.54 e1 5.08 L 14.3 13.5 L1(1) 4.8 4.0 L2 10 m 0.9 0.5 P 3.2 3.0 Q 1.4 1.2 q 4.4 4.0 w 0.4
Note 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. OUTLINE VERSION SOT186 REFERENCES IEC JEDEC TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
1997 Aug 14
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BUX84F; BUX85F
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 14
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
NOTES
BUX84F; BUX85F
1997 Aug 14
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
NOTES
BUX84F; BUX85F
1997 Aug 14
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
NOTES
BUX84F; BUX85F
1997 Aug 14
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 14
Document order number:
9397 750 02724

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